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Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
G. J. Syaranamual, W. A. Sasangka, R. I. Made, S. Arulkumaran, G. I. Ng, S. C. Foo, C. L. Gan*, C. V. Thompson
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
29
Citations
(Scopus)